(TaipeiTimes) A team led by National Cheng Kung University (NCKU) physicists yesterday announced a major breakthrough regarding a next-generation memory storage material that is expected to multiply the efficiency of memory units and pave the way for quantum technology development.
Traditional memory devices process information based on two logic states — zero and one — while their efficiency can be improved only by increasing the density of components and reducing their size. To eliminate the bottleneck in memory development, the team turned to an alternative material — bismuth ferrite (BiFeO3), a material that can record eight logic states and keep the stored information for up to a year even when it is not powered or is heated up to 400°C.
While more time is needed before the technology becomes commercially applicable, its discovery brings the nation a step closer to quantum computing technology, which would require highly efficient calculating units, NCKU vice president for research and development Hsieh Sun-yuan said.